Effect of Rapid Thermal Annealing on the Characteristics of Micro Zn-Doped Ga<sub>2</sub>O<sub>3</sub> Films by Using Mixed Atomic Layer Deposition

Effect of Rapid Thermal Annealing on the Characteristics of Micro Zn-Doped Ga<sub>2</sub>O<sub>3</sub> Films by Using Mixed Atomic Layer Deposition

In this work, micro Zn-doped Ga<sub>2</sub>O<sub>3</sub> films (GZO) were deposited by one-step mixed atomic layer deposition (ALD) followed by post-thermal engineering. The effects of Zn doping and post-annealing temperature on both structure characteristics and electric pro...

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Bibliographic Details
Main Authors: Jiajia Tao, Xishun Jiang, Aijie Fan, Xianyu Hu, Ping Wang, Zuoru Dong, Yingjie Wu
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Nanomaterials
Subjects:
micro Zn-doped Ga<sub>2</sub>O<sub>3</sub> film
atomic layer deposition
thermal annealing effect
electrical property
Online Access:https://www.mdpi.com/2079-4991/15/7/499
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