Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices
Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide. It is derived from the Tri-MethylGallium (TMG/TMGa), a...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Instituto Tecnológico de Costa Rica
2021-11-01
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| Series: | Tecnología en Marcha |
| Subjects: | |
| Online Access: | https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/5966 |
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