Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experime...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10475434/ |
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| author | Sebastian Kolle Friedhard Romer Giulia Cardinali Alexander Schulz Norman Susilo Daniel Hauer Vidal Tim Wernicke Michael Kneissl Bernd Witzigmann |
| author_facet | Sebastian Kolle Friedhard Romer Giulia Cardinali Alexander Schulz Norman Susilo Daniel Hauer Vidal Tim Wernicke Michael Kneissl Bernd Witzigmann |
| author_sort | Sebastian Kolle |
| collection | DOAJ |
| description | Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experimental data obtained through optical pumping, and predict gain spectra for electrical pumping. Special consideration is given to the contribution of higher bands in wide quantum wells. |
| format | Article |
| id | doaj-art-241caad433a548e98ddc80a493c75a84 |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-241caad433a548e98ddc80a493c75a842025-08-20T02:44:40ZengIEEEIEEE Photonics Journal1943-06552024-01-011621510.1109/JPHOT.2024.337923110475434Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy StatesSebastian Kolle0https://orcid.org/0009-0005-2236-9778Friedhard Romer1https://orcid.org/0009-0001-5665-0083Giulia Cardinali2https://orcid.org/0000-0002-1375-4376Alexander Schulz3https://orcid.org/0009-0007-3708-960XNorman Susilo4https://orcid.org/0000-0002-5583-629XDaniel Hauer Vidal5https://orcid.org/0009-0000-6736-2100Tim Wernicke6https://orcid.org/0000-0002-5472-8166Michael Kneissl7https://orcid.org/0000-0003-1476-598XBernd Witzigmann8https://orcid.org/0000-0001-9705-9516Institute for Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanyInstitute for Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanyInstitute of Solid State Physics, Technische Universität Berlin, Berlin, GermanyInstitute of Solid State Physics, Technische Universität Berlin, Berlin, GermanyInstitute of Solid State Physics, Technische Universität Berlin, Berlin, GermanyInstitute of Solid State Physics, Technische Universität Berlin, Berlin, GermanyInstitute of Solid State Physics, Technische Universität Berlin, Berlin, GermanyInstitute of Solid State Physics, Technische Universität Berlin, Berlin, GermanyInstitute for Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, GermanySimulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experimental data obtained through optical pumping, and predict gain spectra for electrical pumping. Special consideration is given to the contribution of higher bands in wide quantum wells.https://ieeexplore.ieee.org/document/10475434/Simulationquantum well lasersoptoelectronic devicesaluminum gallium nitride |
| spellingShingle | Sebastian Kolle Friedhard Romer Giulia Cardinali Alexander Schulz Norman Susilo Daniel Hauer Vidal Tim Wernicke Michael Kneissl Bernd Witzigmann Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States IEEE Photonics Journal Simulation quantum well lasers optoelectronic devices aluminum gallium nitride |
| title | Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States |
| title_full | Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States |
| title_fullStr | Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States |
| title_full_unstemmed | Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States |
| title_short | Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States |
| title_sort | optical gain in algan quantum wells impact of higher energy states |
| topic | Simulation quantum well lasers optoelectronic devices aluminum gallium nitride |
| url | https://ieeexplore.ieee.org/document/10475434/ |
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