Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States

Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States

Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experime...

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Bibliographic Details
Main Authors: Sebastian Kolle, Friedhard Romer, Giulia Cardinali, Alexander Schulz, Norman Susilo, Daniel Hauer Vidal, Tim Wernicke, Michael Kneissl, Bernd Witzigmann
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Photonics Journal
Subjects:
Simulation
quantum well lasers
optoelectronic devices
aluminum gallium nitride
Online Access:https://ieeexplore.ieee.org/document/10475434/
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https://ieeexplore.ieee.org/document/10475434/

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