400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI
The introduction of 400 V SiC MOSFET technology bridges the voltage range gap between 200 V medium-voltage MOSFETs and 600 V super-junction MOSFETs. This technology is characterized by low switching losses and low on-state resistance, making it suitable for 2-level topologies in 120 VAC or 300 VDC s...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-12-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S277237042500029X |
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