400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI

400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI

The introduction of 400 V SiC MOSFET technology bridges the voltage range gap between 200 V medium-voltage MOSFETs and 600 V super-junction MOSFETs. This technology is characterized by low switching losses and low on-state resistance, making it suitable for 2-level topologies in 120 VAC or 300 VDC s...

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Bibliographic Details
Main Authors: Ralf Siemieniec, Martin Wattenberg, Ertugrul Kocaaga, Sriram Jagannath, Elvir Kahrimanovic, Jyotshna Bhandari, Heejae Shim, Alberto Pignatelli
Format: Article
Language:English
Published: Elsevier 2025-12-01
Series:Power Electronic Devices and Components
Subjects:
SiC MOSFET
Power supply
Drive»
Power semiconductor device»
Power system
Bi-directional converter
Online Access:http://www.sciencedirect.com/science/article/pii/S277237042500029X
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http://www.sciencedirect.com/science/article/pii/S277237042500029X

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