Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films
SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS) at room temperature. The experimental results show...
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| Format: | Article |
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Wiley
2014-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/594516 |
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| author | Jian-Yang Lin Bing-Xun Wang |
| author_facet | Jian-Yang Lin Bing-Xun Wang |
| author_sort | Jian-Yang Lin |
| collection | DOAJ |
| description | SiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS) at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly. |
| format | Article |
| id | doaj-art-2212e192dfce4fc8bbaca4f4c8e6de10 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
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| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-2212e192dfce4fc8bbaca4f4c8e6de102025-02-03T05:45:30ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/594516594516Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 FilmsJian-Yang Lin0Bing-Xun Wang1Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliou 64002, TaiwanGraduate School of Engineering Science & Technology, National Yunlin University of Science and Technology, Douliou 64002, TaiwanSiO2 or Cu-doped SiO2 (Cu:SiO2) insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM) cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS) at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.http://dx.doi.org/10.1155/2014/594516 |
| spellingShingle | Jian-Yang Lin Bing-Xun Wang Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films Advances in Materials Science and Engineering |
| title | Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films |
| title_full | Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films |
| title_fullStr | Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films |
| title_full_unstemmed | Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films |
| title_short | Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films |
| title_sort | room temperature voltage stressing effects on resistive switching of conductive bridging ram cells with cu doped sio2 films |
| url | http://dx.doi.org/10.1155/2014/594516 |
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