Improving Linearity and Symmetry of Synaptic Update Characteristics and Retentivity of Synaptic States of the Domain-Wall Device Through Addition of Edge Notches
Compute-in-memory (CIM) crossbar arrays of non-volatile memory (NVM) synapse devices have been considered very attractive for fast and energy-efficient implementation of various neural network (NN) algorithms. High retention time of the synaptic states and high linearity and symmetry of the synaptic...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Open Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10787236/ |
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