SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current

SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current

Using novel SiO<sub>2</sub> surface passivation and ultraviolet (UV) light anneal, a 12 nm thick SnO p-type FET (pFET) shows hole effective mobilities (µ<sub>eff</sub>) of more than 100 cm<sup>2</sup>/V·s and 31.1 cm<sup>2</sup>/V·s at hole densities (...

Full description

Saved in:
Bibliographic Details
Main Authors: Kuan-Chieh Chen, Jiancheng Wu, Pheiroijam Pooja, Albert Chin
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Nanomaterials
Subjects:
effective mobility
transistor
SnO
passivation
UV anneal
Online Access:https://www.mdpi.com/2079-4991/15/9/640
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://www.mdpi.com/2079-4991/15/9/640

Similar Items