Spectral characteristics of initial and irradiated GaAsP LEDs
The optical characteristics of the GaAs1-хPх output LEDs and LEDs irradiated with electrons with Е = 2 MeV, Ф = 1015 ÷ 1016 cm-2 were studied. The width of the band gap of the GaAs1-хPх (х = 0.45) solid solution was estimated. Its growth is caused by the heating of carriers by the field of the p-n j...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2021-06-01
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| Series: | Ядерна фізика та енергетика |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/22.2/Articles_PDF/jnpae-2021-22-0143-Vernydub.pdf |
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