Performance Degradation of Ga<sub>2</sub>O<sub>3</sub>-Based X-Ray Detector Under Gamma-Ray Irradiation
X-ray response performances of a p-NiO/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at −200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector...
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/3/339 |
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| Summary: | X-ray response performances of a p-NiO/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at −200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector were influenced by the trap-assistant conductive process of the HJD under reverse bias, which exhibited an increasing net (response) current, nonlinearity, and a long response time. After irradiation, the Poole–Frenkel emission (PFE) dominated the leakage current of HJDs due to the higher electric field caused by the increased net carrier concentration of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>. This conductive process weakened the performance of the HJD X-ray detector in terms of sensitivity, output linearity, and response speed. This study provided valuable insights into the radiation damage and performance degradation mechanisms of Ga<sub>2</sub>O<sub>3</sub>-based radiation detectors and offered guidance on improving the reliability and stability of these radiation detectors. |
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| ISSN: | 2072-666X |