Performance Degradation of Ga<sub>2</sub>O<sub>3</sub>-Based X-Ray Detector Under Gamma-Ray Irradiation

Performance Degradation of Ga<sub>2</sub>O<sub>3</sub>-Based X-Ray Detector Under Gamma-Ray Irradiation

X-ray response performances of a p-NiO/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at −200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector...

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Main Authors: Xiao Ouyang, Silong Zhang, Tao Bai, Zhuo Chen, Yuxin Deng, Leidang Zhou, Xiaojing Song, Hao Chen, Yuru Lai, Xing Lu, Liang Chen, Liangliang Miao, Xiaoping Ouyang
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Micromachines
Subjects:
gallium oxide
hetero-junction
semiconductor detector
X-ray detection
γ radiation
Online Access:https://www.mdpi.com/2072-666X/16/3/339
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