Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation

Heavy Ions Induced Single-Event Transient in SiGe-on-SOI HBT by TCAD Simulation

In this work, the effects of heavy ion strike position, incident angle, linear energy transfer (LET) value, ambient temperature, bias conditions, and the synergistic effects of total dose irradiation on the single-event transient (SET) in silicon-germanium heterojunction bipolar transistors on silic...

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Bibliographic Details
Main Authors: Yuedecai Long, Abuduwayiti Aierken, Xuefei Liu, Mingqiang Liu, Changsong Gao, Gang Wang, Degui Wang, Sandip Majumdar, Yundong Xuan, Mengxin Liu, Jinshun Bi
Format: Article
Language:English
Published: MDPI AG 2025-04-01
Series:Micromachines
Subjects:
SiGe heterojunction bipolar transistor
silicon-on-insulator
single-event transient
heavy ions
Online Access:https://www.mdpi.com/2072-666X/16/5/532
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