Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment
A two-step annealing treatment was applied on a fully transparent amorphous InGaZnO4 (a-IGZO) top-gate thin-film transistor (TG-TFT) to improve the device performance. The electrical properties and stabilities of a-IGZO TG TFTs were significantly improved as the first-annealing temperature increased...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-03-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/6/460 |
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