Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device
Abstract In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent elect...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2020-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202000066 |
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| author | Wei‐Chen Huang Hao‐Xuan Zheng Po‐Hsun Chen Ting‐Chang Chang Yung‐Fang Tan Shih‐Kai Lin Yong‐Ci Zhang Fu‐Yuan Jin Chung‐Wei Wu Yu‐Hsuan Yeh Sheng‐Yao Chou Hui‐Chun Huang Yan‐Wen Chen Simon M. Sze |
| author_facet | Wei‐Chen Huang Hao‐Xuan Zheng Po‐Hsun Chen Ting‐Chang Chang Yung‐Fang Tan Shih‐Kai Lin Yong‐Ci Zhang Fu‐Yuan Jin Chung‐Wei Wu Yu‐Hsuan Yeh Sheng‐Yao Chou Hui‐Chun Huang Yan‐Wen Chen Simon M. Sze |
| author_sort | Wei‐Chen Huang |
| collection | DOAJ |
| description | Abstract In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent electrical output characteristics. Fin‐like structure produces more stable output characteristics. Also, the forming and current–voltage (I–V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about −1.9 V. As for the I–V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin‐like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin‐like LTPS transistor for application in current integrated circuit processes without difficulty. |
| format | Article |
| id | doaj-art-20152ee7b69a4b7085c2bde7200ff155 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2020-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-20152ee7b69a4b7085c2bde7200ff1552025-08-20T03:31:33ZengWiley-VCHAdvanced Electronic Materials2199-160X2020-06-0166n/an/a10.1002/aelm.202000066Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R DeviceWei‐Chen Huang0Hao‐Xuan Zheng1Po‐Hsun Chen2Ting‐Chang Chang3Yung‐Fang Tan4Shih‐Kai Lin5Yong‐Ci Zhang6Fu‐Yuan Jin7Chung‐Wei Wu8Yu‐Hsuan Yeh9Sheng‐Yao Chou10Hui‐Chun Huang11Yan‐Wen Chen12Simon M. Sze13Department of Physics National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Physics National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Applied Science R.O.C. Naval Academy Kaohsiung 813 TaiwanDepartment of Physics National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Materials and Optoelectronic Science National Sun Yat‐Sen University Kaohsiung 804 TaiwanInstitute of Electronics Engineering National Tsing Hua University Hsinchu 30013 TaiwanDepartment of Materials and Optoelectronic Science National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Physics National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Physics National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Physics National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Materials and Optoelectronic Science National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Materials and Optoelectronic Science National Sun Yat‐Sen University Kaohsiung 804 TaiwanCenter for Nanoscience and Nanotechnology National Sun Yat‐Sen University Kaohsiung 804 TaiwanDepartment of Electronics Engineering and Institute of Electronics National Chiao Tung University Hsinchu 30010 Taiwan R. O. C.Abstract In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent electrical output characteristics. Fin‐like structure produces more stable output characteristics. Also, the forming and current–voltage (I–V) characteristics are measured in this study, and the RRAM exhibits a forming voltage of about −1.9 V. As for the I–V switching property, the devices are stable and show excellent performance, with the set and reset voltages showing only minimal change over 100 cycles. Moreover, combining the fin‐like LTPS transistor and RRAM into a 1T1R structure results in favorable operation over 100 cycles, with excellent retention and endurance. According to these results, RRAM can be successfully combined with a fin‐like LTPS transistor for application in current integrated circuit processes without difficulty.https://doi.org/10.1002/aelm.202000066fabricationfin‐like low‐temperature polysilicon (LTPS)one transistor one resistor (1T1R)resistive random access memory (RRAM) |
| spellingShingle | Wei‐Chen Huang Hao‐Xuan Zheng Po‐Hsun Chen Ting‐Chang Chang Yung‐Fang Tan Shih‐Kai Lin Yong‐Ci Zhang Fu‐Yuan Jin Chung‐Wei Wu Yu‐Hsuan Yeh Sheng‐Yao Chou Hui‐Chun Huang Yan‐Wen Chen Simon M. Sze Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device Advanced Electronic Materials fabrication fin‐like low‐temperature polysilicon (LTPS) one transistor one resistor (1T1R) resistive random access memory (RRAM) |
| title | Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device |
| title_full | Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device |
| title_fullStr | Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device |
| title_full_unstemmed | Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device |
| title_short | Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device |
| title_sort | incorporation of resistive random access memory into low temperature polysilicon transistor with fin like structure as 1t1r device |
| topic | fabrication fin‐like low‐temperature polysilicon (LTPS) one transistor one resistor (1T1R) resistive random access memory (RRAM) |
| url | https://doi.org/10.1002/aelm.202000066 |
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