Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

Abstract In this study, a one transistor one resistor (1T1R) structure combining a fin‐like low‐temperature polycrystalline‐silicon (LTPS) transistor and a resistive random access memory (RRAM) is successfully fabricated. For the fin‐like LTPS transistor, both n‐type and p‐types show excellent elect...

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Main Authors: Wei‐Chen Huang, Hao‐Xuan Zheng, Po‐Hsun Chen, Ting‐Chang Chang, Yung‐Fang Tan, Shih‐Kai Lin, Yong‐Ci Zhang, Fu‐Yuan Jin, Chung‐Wei Wu, Yu‐Hsuan Yeh, Sheng‐Yao Chou, Hui‐Chun Huang, Yan‐Wen Chen, Simon M. Sze
Format: Article
Language:English
Published: Wiley-VCH 2020-06-01
Series:Advanced Electronic Materials
Subjects:
fabrication
fin‐like low‐temperature polysilicon (LTPS)
one transistor one resistor (1T1R)
resistive random access memory (RRAM)
Online Access:https://doi.org/10.1002/aelm.202000066
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https://doi.org/10.1002/aelm.202000066

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