CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability

CFET Beyond 3 nm: SRAM Reliability Under Design-Time and Run-Time Variability

This work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging effects. A rigorously calibrated TCAD model, validated against experimental CFET d...

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Bibliographic Details
Main Authors: Sufia Shahin, Swati Deshwal, Anirban Kar, Mahdi Benkhelifa, Yogesh S. Chauhan, Hussam Amrouch
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Aging
compact modeling
CFET
process variation
SRAM
TCAD
Online Access:https://ieeexplore.ieee.org/document/10994809/
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https://ieeexplore.ieee.org/document/10994809/

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