High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates

High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates

This letter reports the demonstration and electrical characterization of high-voltage AlN metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates. Compared with AlN MESFETs on foreign substrates, the AlN-on-AlN MESFETs showed high breakdown voltages of over 2 kV for d...

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Bibliographic Details
Main Authors: Bingcheng Da, Dinusha Herath Mudiyanselage, Dawei Wang, Ziyi He, Houqiang Fu
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Applied Physics Express
Subjects:
AlN
metal-semiconductor field-effect transistors
temperature-depedndent measurements
Online Access:https://doi.org/10.35848/1882-0786/ad85c0
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https://doi.org/10.35848/1882-0786/ad85c0

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