Detection of defects with carbon–carbon single-bonds in near-surface region of SiC induced by low-oxygen-partial-pressure annealing by using FTIR
In this study, we investigated the formation of defects with carbon–carbon single-bonds in 4H-SiC induced by high-temperature annealing under low oxygen-partial-pressure ( P o _2 ) conditions, using attenuated total reflectance Fourier-transform infrared spectroscopy. The results show that the carbo...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Online Access: | https://doi.org/10.35848/1882-0786/adb2db |
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