Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium–Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability
The use of hafnium-zirconium oxide (HZO) in ferroelectric memory has garnered significant interest due to its excellent scalability and compatibility with complementary metal-oxide-semiconductor and back-end-of-line processes. However, a significant challenge is the reduction of operational voltage....
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10701008/ |
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