Projected Range, Straggling and Sputtering Yield of the Ion-Impingement of Inert Gases in Group IV, InP and GaAs Semiconductors
One of the major challenges in ion implantation and sputtering process (especially in thin film deposition) is to get a shallow or very deep profile and maximum sputtering yield respectively. In this paper, we simulate the projected range, lateral straggle, longitudinal straggle and sputtering yield...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2015-03-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01002.pdf |
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