Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors

Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors

Abstract Black phosphorus (bP) is one of the more recently discovered layered materials. Utilizing the hysteresis in the transfer characteristics of bP field‐effect transistors (FETs), several approaches to realize non‐volatile memory devices are successfully demonstrated. This hysteresis is commonl...

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Bibliographic Details
Main Authors: Stephan Sleziona, Osamah Kharsah, Lucia Skopinski, Leon Daniel, Jennifer Schmeink, Marika Schleberger
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
2D materials
black phosphorus
defects
field‐effect transistor
ion irradiation
non‐volatile memory device
Online Access:https://doi.org/10.1002/aelm.202400318
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https://doi.org/10.1002/aelm.202400318

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