Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications
Abstract Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline sili...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
|
| Series: | npj Quantum Information |
| Online Access: | https://doi.org/10.1038/s41534-025-00967-5 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850063459634380800 |
|---|---|
| author | Anthony P. McFadden Aranya Goswami Tongyu Zhao Teun van Schijndel Trevyn F. Q. Larson Sudhir Sahu Stephen Gill Florent Lecocq Raymond Simmonds Chris Palmstrøm |
| author_facet | Anthony P. McFadden Aranya Goswami Tongyu Zhao Teun van Schijndel Trevyn F. Q. Larson Sudhir Sahu Stephen Gill Florent Lecocq Raymond Simmonds Chris Palmstrøm |
| author_sort | Anthony P. McFadden |
| collection | DOAJ |
| description | Abstract Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits by evaluating the performance of lumped element resonators and transmon qubits. High aspect ratio Si-fin capacitors having widths below 300 nm with an approximate total height of 3 μm are fabricated using anisotropic wet etching of Si(110) substrates followed by aluminum metallization. The single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional A l/A l O x /A l Josephson junctions respectively. Microwave characterization of these devices suggests state-of-the-art performance for superconducting parallel plate capacitors with low power internal quality factor of lumped element resonators greater than 500 k and qubit T 1 times greater than 25 μs. These results suggest that Si-Fins are a promising technology for applications that require low-loss, compact, superconductor-based capacitors with minimal stray capacitance. |
| format | Article |
| id | doaj-art-1afff2c7e7fc453fac6e004667570bec |
| institution | DOAJ |
| issn | 2056-6387 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Quantum Information |
| spelling | doaj-art-1afff2c7e7fc453fac6e004667570bec2025-08-20T02:49:35ZengNature Portfolionpj Quantum Information2056-63872025-01-011111610.1038/s41534-025-00967-5Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applicationsAnthony P. McFadden0Aranya Goswami1Tongyu Zhao2Teun van Schijndel3Trevyn F. Q. Larson4Sudhir Sahu5Stephen Gill6Florent Lecocq7Raymond Simmonds8Chris Palmstrøm9National Institute of Standards and TechnologyDepartment of Electrical and Computer Engineering, University of CaliforniaNational Institute of Standards and TechnologyDepartment of Electrical and Computer Engineering, University of CaliforniaNational Institute of Standards and TechnologyNational Institute of Standards and TechnologyNational Institute of Standards and TechnologyNational Institute of Standards and TechnologyNational Institute of Standards and TechnologyDepartment of Electrical and Computer Engineering, University of CaliforniaAbstract Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits by evaluating the performance of lumped element resonators and transmon qubits. High aspect ratio Si-fin capacitors having widths below 300 nm with an approximate total height of 3 μm are fabricated using anisotropic wet etching of Si(110) substrates followed by aluminum metallization. The single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional A l/A l O x /A l Josephson junctions respectively. Microwave characterization of these devices suggests state-of-the-art performance for superconducting parallel plate capacitors with low power internal quality factor of lumped element resonators greater than 500 k and qubit T 1 times greater than 25 μs. These results suggest that Si-Fins are a promising technology for applications that require low-loss, compact, superconductor-based capacitors with minimal stray capacitance.https://doi.org/10.1038/s41534-025-00967-5 |
| spellingShingle | Anthony P. McFadden Aranya Goswami Tongyu Zhao Teun van Schijndel Trevyn F. Q. Larson Sudhir Sahu Stephen Gill Florent Lecocq Raymond Simmonds Chris Palmstrøm Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications npj Quantum Information |
| title | Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications |
| title_full | Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications |
| title_fullStr | Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications |
| title_full_unstemmed | Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications |
| title_short | Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications |
| title_sort | fabrication and characterization of low loss al si al parallel plate capacitors for superconducting quantum information applications |
| url | https://doi.org/10.1038/s41534-025-00967-5 |
| work_keys_str_mv | AT anthonypmcfadden fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT aranyagoswami fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT tongyuzhao fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT teunvanschijndel fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT trevynfqlarson fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT sudhirsahu fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT stephengill fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT florentlecocq fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT raymondsimmonds fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications AT chrispalmstrøm fabricationandcharacterizationoflowlossalsialparallelplatecapacitorsforsuperconductingquantuminformationapplications |