Proximity effect correction in electron beam lithography using a composite function model of electron scattering energy distribution
Abstract The proximity effect induced by electron scattering is one of the main factors limiting the development of high-resolution electron beam lithography (EBL) technology. Existing proximity effect correction (PEC) methods often face challenges related to either high computational demands or ins...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2025-05-01
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| Series: | Discover Nano |
| Online Access: | https://doi.org/10.1186/s11671-025-04264-0 |
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