Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and low-frequency noises (LFN) are analyzed in deta...

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Bibliographic Details
Main Authors: X. B. Xu, B. Li, Y. Q. Chen, Z. H. Wu, Z. Y. He, L. Liu, S. Z. He, Y. F. En, Y. Huang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN
high-electron-mobility transistor (HEMT)
recovery
reverse ESD stress
low-frequency noise (LFN)
Online Access:https://ieeexplore.ieee.org/document/9270282/
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