Modeling of Phototransistors Based on Quasi-Two-Dimensional Transition Metal Dichalcogenides

Modeling of Phototransistors Based on Quasi-Two-Dimensional Transition Metal Dichalcogenides

This study introduces a comprehensive physical modeling framework for phototransistors based on quasi-two-dimensional transition metal dichalcogenides, with a particular emphasis on MoS<sub>2</sub>. By integrating electromagnetic simulations of optical absorption with semiconductor trans...

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Bibliographic Details
Main Authors: Sergey D. Lavrov, Andrey A. Guskov
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Modelling
Subjects:
phototransistor modeling
transition metal dichalcogenides
MoS<sub>2</sub> photodetector
quasi-two-dimensional materials
optoelectronics
photocurrent analysis
Online Access:https://www.mdpi.com/2673-3951/6/2/47
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