Modeling of Phototransistors Based on Quasi-Two-Dimensional Transition Metal Dichalcogenides
This study introduces a comprehensive physical modeling framework for phototransistors based on quasi-two-dimensional transition metal dichalcogenides, with a particular emphasis on MoS<sub>2</sub>. By integrating electromagnetic simulations of optical absorption with semiconductor trans...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Modelling |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-3951/6/2/47 |
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