Gallium nitride (GaN) scintillation response to fast neutrons and flash gamma rays and associated broadband photoluminescence

Gallium nitride (GaN) scintillation response to fast neutrons and flash gamma rays and associated broadband photoluminescence

Gallium nitride (GaN), a wide-bandgap semiconductor (3.45 eV), has emerged as a promising material for radiation detection due to its exceptional radiation tolerance, high thermal stability, and ultrafast scintillation response. This study investigates the energy-dependent scintillation response of...

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Bibliographic Details
Main Authors: D. J. Valdes, L. Rendon, S. Miller, J. J. Castaneda, C. Leak, S. Haque, K. Gunthoti, S. A. Wender, J. Winkelbauer, S. N. Paneru, H. Y. Lee, S. C. Vogel, K.-X. Sun
Format: Article
Language:English
Published: AIP Publishing LLC 2025-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0271782
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http://dx.doi.org/10.1063/5.0271782

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