Etching Chemistry Process Optimization of Ethylene Diluted with Helium (C<sub>2</sub>H<sub>4</sub>/He) in Interconnect Integration

Etching Chemistry Process Optimization of Ethylene Diluted with Helium (C<sub>2</sub>H<sub>4</sub>/He) in Interconnect Integration

This study explores the effects of different passivation gases on the properties of polymers formed on aluminum (Al) sidewalls during the etching process in Al-based interconnect structures. The research compares the use of nitrogen (N<sub>2</sub>) and ethylene diluted with helium (C<...

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Bibliographic Details
Main Authors: Hwa-Rim Lee, Eun-Su Jung, Jin-Uk Yoo, Tae-Min Choi, Sung-Gyu Pyo
Format: Article
Language:English
Published: MDPI AG 2024-11-01
Series:Micromachines
Subjects:
metal etch
polymer
Decoupled Plasma Source (DPS)
ion chromatography (ICG)
Transmission Electron Microscopy (TEM)
Auger Electron Spectroscopy (AES)
Online Access:https://www.mdpi.com/2072-666X/15/12/1439
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