Strain-induced variation in quantum dot emissions close to Si-vacancy transitions

Strain-induced variation in quantum dot emissions close to Si-vacancy transitions

Solid-state quantum platforms have great potential as well-controllable, scalable devices for applications in quantum communication. Semiconductor quantum dots are a leading candidate for the deterministic generation of high-quality single or entangled photons. Wavelength tunability is a fundamental...

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Main Authors: Zhao An, Xin Cao, Maik Steinbach, Jürgen Koch, Peter Jäschke, Christian Laurio, Frederik Benthin, Yiteng Zhang, Chenxi Ma, Eddy Patrick Rugeramigabo, Rolf J. Haug, Jingzhong Yang, Michael Zopf
Format: Article
Language:English
Published: AIP Publishing LLC 2025-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0267909
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http://dx.doi.org/10.1063/5.0267909

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