Enhancing Device Performance with High Electron Mobility GeSn Materials

Enhancing Device Performance with High Electron Mobility GeSn Materials

Abstract As transistors continue to shrink, the need to replace silicon with materials of higher carrier mobilities becomes imperative. Group‐IV semiconductors, and particularly GeSn alloys, stand out for their high electron and hole mobilities, making them attractive for next‐generation electronics...

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Main Authors: Yannik Junk, Omar Concepción, Marvin Frauenrath, Jingxuan Sun, Jin Hee Bae, Florian Bärwolf, Andreas Mai, Jean‐Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing‐Tai Zhao
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Electronic Materials
Subjects:
direct bandgap
electron mobility
GAA nanowire MOSFET
GeSn alloy
group‐IV materials
Online Access:https://doi.org/10.1002/aelm.202400561
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https://doi.org/10.1002/aelm.202400561

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