Reliability analysis under bias stress and elevated temperature of dual-gate IGZO TFT
Indium–gallium–zinc oxide (IGZO) as a star material has been broadly applied in multiple functional devices, including planar displays, flexible electronic devices, and photoelectronics. In recent years, the development of artificial intelligence and great data also extends the application of IGZO-b...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0232559 |
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