Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure
Abstract In the field of memory and spin‐logical devices, multiferroics have the potentials of low‐energy informational operation. A novel memory and logic device in a PbZr0.2Ti0.8O3/Co/Pt (PZT/Co/Pt) multiferroic heterostructure with perpendicular magnetic anisotropy (PMA) is proposed. The PMA of P...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2020-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202000102 |
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