Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure

Abstract In the field of memory and spin‐logical devices, multiferroics have the potentials of low‐energy informational operation. A novel memory and logic device in a PbZr0.2Ti0.8O3/Co/Pt (PZT/Co/Pt) multiferroic heterostructure with perpendicular magnetic anisotropy (PMA) is proposed. The PMA of P...

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Bibliographic Details
Main Authors: Zengyao Ren, Mengxi Wang, Pengfei Liu, Qi Liu, Kaiyou Wang, Gehard Jakob, Jikun Chen, Kangkang Meng, Xiaoguang Xu, Jun Miao, Yong Jiang
Format: Article
Language:English
Published: Wiley-VCH 2020-06-01
Series:Advanced Electronic Materials
Subjects:
anomalous Hall effect
ferroelectric control
multiferroic heterostructure
perpendicular magnetic anisotropy
Online Access:https://doi.org/10.1002/aelm.202000102
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https://doi.org/10.1002/aelm.202000102

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