Ren, Z., Wang, M., Liu, P., Liu, Q., Wang, K., Jakob, G., . . . Jiang, Y. Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure. Wiley-VCH.
Chicago Style (17th ed.) CitationRen, Zengyao, et al. Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure. Wiley-VCH.
MLA (9th ed.) CitationRen, Zengyao, et al. Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure. Wiley-VCH.
Warning: These citations may not always be 100% accurate.