Photocell with two Schottky barrier contacts Ti-p-Si and ohmic silicide contact NiSi-p-Si
Way for the fabrication and results of studies of photoelectric features of twospectrum photocell with two Schottky barrier contacts Ti-p-Si on one party of the silicon plate and ohmic silicide contact NiSi-p-Si situated on the opposite party of the plate are considered. It is shown that explore...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-03-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/62-66%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| Summary: | Way for the fabrication and results of studies of photoelectric
features of twospectrum photocell with two Schottky barrier
contacts Ti-p-Si on one party of the silicon plate and ohmic
silicide contact NiSi-p-Si situated on the opposite party of the
plate are considered. It is shown that explored photocell can be
used for the transformation of the energy of the radiation in the
electrical energy at room temperature in two ranges: or in near
infrared region of the spectrum (0,9–1,4) micron, or in the field
of (0,5–1,4) micron. This characteristic of the designed photocell
will allow increasing its application. Photocell possesses a simple
structure and technology with a time of its fabrication in the
interval (2,5–3) of the hour. |
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| ISSN: | 1813-8225 2541-7541 |