Photocell with two Schottky barrier contacts Ti-p-Si and ohmic silicide contact NiSi-p-Si

Photocell with two Schottky barrier contacts Ti-p-Si and ohmic silicide contact NiSi-p-Si

Way for the fabrication and results of studies of photoelectric features of twospectrum photocell with two Schottky barrier contacts Ti-p-Si on one party of the silicon plate and ohmic silicide contact NiSi-p-Si situated on the opposite party of the plate are considered. It is shown that explore...

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Bibliographic Details
Main Author: R. B. Burlakov
Format: Article
Language:English
Published: Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education 2020-03-01
Series:Омский научный вестник
Subjects:
method of fabricating the photocell
p-type silicon
schottky barrier contacts ti-p-si
silicide contact nisi-p-si
Online Access:https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/62-66%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf
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https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/1%20(169)/62-66%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf

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