Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising. Research on novel materials and device structures is required to meet t...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2025-01-01
|
| Series: | E3S Web of Conferences |
| Subjects: | |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2025/01/e3sconf_icegc2024_00047.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832098581117403136 |
|---|---|
| author | El-Yazami Chaimae Bri Seddik El Fadl Adiba |
| author_facet | El-Yazami Chaimae Bri Seddik El Fadl Adiba |
| author_sort | El-Yazami Chaimae |
| collection | DOAJ |
| description | Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising. Research on novel materials and device structures is required to meet the criteria. This research presents a novel GaN HEMT construction. The components of an AlGaN/GaN heterojunction HEMT are the drain, source and gate electrode. Since M. Asif Khan and his colleagues published the first AlGaN/GaN HEMT in 1993, a lot of HEMT structures have been reported by researchers; nevertheless, none of them contain three electrodes on distinct sides of the device. In this study, we constructed a 2DEG GaN HEMT and observed its features, including its drain current characteristics curves, Ion/Ioff ratio, and transconductance characteristics curves. Which were acquired from simulations carried out with Silvaco ATLAS™. |
| format | Article |
| id | doaj-art-159605c4271d41548e183496f22d1f34 |
| institution | Kabale University |
| issn | 2267-1242 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | E3S Web of Conferences |
| spelling | doaj-art-159605c4271d41548e183496f22d1f342025-02-05T10:46:25ZengEDP SciencesE3S Web of Conferences2267-12422025-01-016010004710.1051/e3sconf/202560100047e3sconf_icegc2024_00047Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™El-Yazami Chaimae0Bri Seddik1El Fadl Adiba2Materials and Instrumentation (MIM), High School of Technology Moulay Ismail University MeknesMaterials and Instrumentation (MIM), High School of Technology Moulay Ismail University MeknesMaterials and Instrumentation (MIM), High School of Technology Moulay Ismail University MeknesSince the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising. Research on novel materials and device structures is required to meet the criteria. This research presents a novel GaN HEMT construction. The components of an AlGaN/GaN heterojunction HEMT are the drain, source and gate electrode. Since M. Asif Khan and his colleagues published the first AlGaN/GaN HEMT in 1993, a lot of HEMT structures have been reported by researchers; nevertheless, none of them contain three electrodes on distinct sides of the device. In this study, we constructed a 2DEG GaN HEMT and observed its features, including its drain current characteristics curves, Ion/Ioff ratio, and transconductance characteristics curves. Which were acquired from simulations carried out with Silvaco ATLAS™.https://www.e3s-conferences.org/articles/e3sconf/pdf/2025/01/e3sconf_icegc2024_00047.pdfalgan/gan hemt2-degdrain current characteristicstransconductancet-cad silvaco |
| spellingShingle | El-Yazami Chaimae Bri Seddik El Fadl Adiba Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ E3S Web of Conferences algan/gan hemt 2-deg drain current characteristics transconductance t-cad silvaco |
| title | Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ |
| title_full | Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ |
| title_fullStr | Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ |
| title_full_unstemmed | Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ |
| title_short | Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ |
| title_sort | model of algan gan based on high electron mobility transistors using silvaco atlas™ |
| topic | algan/gan hemt 2-deg drain current characteristics transconductance t-cad silvaco |
| url | https://www.e3s-conferences.org/articles/e3sconf/pdf/2025/01/e3sconf_icegc2024_00047.pdf |
| work_keys_str_mv | AT elyazamichaimae modelofalganganbasedonhighelectronmobilitytransistorsusingsilvacoatlas AT briseddik modelofalganganbasedonhighelectronmobilitytransistorsusingsilvacoatlas AT elfadladiba modelofalganganbasedonhighelectronmobilitytransistorsusingsilvacoatlas |