Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS
The measurement of doping concentrations is a fundamental need for the development and processing of power electronic devices like normally-off semi-vertical GaN trench MOSFETs. We employed highly laterally resolved TOF-SIMS to evaluate the doping levels of the n- and p- doped layers close to the ga...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
|
| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000070 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|