Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS

Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS

The measurement of doping concentrations is a fundamental need for the development and processing of power electronic devices like normally-off semi-vertical GaN trench MOSFETs. We employed highly laterally resolved TOF-SIMS to evaluate the doping levels of the n- and p- doped layers close to the ga...

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Bibliographic Details
Main Authors: Patrick Diehle, Stephan Gierth, Mickael Lejoyeux, Karen Geens, Matteo Borga, Frank Altmann
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Power Electronic Devices and Components
Subjects:
Time-of-flight secondary ion mass spectrometry
Vertical power transistors
Evaluate doping levels close to the gate trench
Lateral resolution of approx. 100 nm
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000070
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