Arsenic-free Ge-Te-based ovonic threshold switching material with reduced leakage current
Abstract There is growing interest in next-generation semiconductor memory that combines high speed, large capacity, and non-volatility. Many types of emerging memory technologies, such as PCRAM and MRAM, are being developed utilizing 3D crossbar array structures to achieve high integration. In this...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-01323-5 |
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