An improved SiC SWITCH‐MOS with superior forward performance
Abstract An improved 4H‐SiC SBD‐wall‐integrated trench metal‐oxide‐semiconductor (SWITCH‐MOS) with n‐bury and split‐gate is proposed. Under the premise of ensuring breakdown voltage (BV), the n‐bury layer can smooth the path to current conduction, which reduces the specific on‐resistance (RON, SP) a...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-11-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12808 |
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