Research on Partial Discharge Behavior of AlN Substrate in High Voltage IGBT Module
Finite element method was utilized to simulate static electric field distribution in AlN substrate of IGBT module, on which partial discharge experiment was performed. Furthermore, the effect of periodic thermal stress on partial discharge characteristic of AlN substrate in IGBT module was further a...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2015-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.05.008 |
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