Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes

Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes

NiO<i><sub>x</sub></i> is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. Broadband photodetectors with high responsivity (<i>R</i>) were fabricated by depositing r.f.-sputtered NiO<i><sub>x...

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Bibliographic Details
Main Authors: Roumen Nedev, David Mateos-Anzaldo, Eddue Osuna-Escalante, Oscar Perez-Landeros, Mario Curiel-Alvarez, Esteban Osorio-Urquizo, Jhonathan Castillo-Saenz, Javier Lopez-Medina, Benjamin Valdez-Salas, Nicola Nedev
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Inorganics
Subjects:
NiO<i><sub>x</sub></i>-nSi broadband photodetectors
high responsivity
r.f. sputtering
effect of RTA treatment
light sensors
Online Access:https://www.mdpi.com/2304-6740/13/1/11
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