Sensorless Dual TSEP (<i>V<sub>th</sub></i>, <i>R<sub>dson</sub></i>) Implementation for Junction Temperature Measurement in Parallelized SiC MOSFETs

Sensorless Dual TSEP (<i>V<sub>th</sub></i>, <i>R<sub>dson</sub></i>) Implementation for Junction Temperature Measurement in Parallelized SiC MOSFETs

This article presents a method for detecting the temperature distribution of two parallelized Silicon Carbide (SiC) MOSFETs. Two thermally sensitive electrical parameters (TSEPs), namely the on-state resistance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" disp...

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Bibliographic Details
Main Authors: Louis Alauzet, Patrick Tounsi, Jean-Pierre Fradin
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Energies
Subjects:
SiC MOSFETs
parallelization
thermal imbalance
thermo-sensitive electrical parameter
temperature
temperature measurement
Online Access:https://www.mdpi.com/1996-1073/18/13/3470
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