19~21 GHz GaAs high linearity power amplifier MMIC
Based on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper. In the scenario of signal transmission with high peak-to average power ratio（PAPR）,the efficiency and linearity of power amplifier（PA）have...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2025-04-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000171294 |
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