Photoelectrochemical Behavior of Heterostructure Based on Doping Effect: BiVO4/BiV1−xTixO4 System

Photoelectrochemical Behavior of Heterostructure Based on Doping Effect: BiVO4/BiV1−xTixO4 System

In this study, a set of Ti‐doped BiVO4 photoelectrodes with Ti content varying in the range from 0 to 10 at% is synthesized. All synthesized samples are characterized by XRD, Raman spectroscopy, XPS, UPS, and Kelvin probe methods confirming the formation of the target materials. UPS and Kelvin probe...

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Bibliographic Details
Main Authors: Anna A. Murashkina, Tair V. Bakiev, Aida V. Rudakova, Alexei V. Emeline, Detlef W. Bahnemann
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:ChemElectroChem
Subjects:
bismuth vanadate
doping
Fermi level
heterostructure
photocurrent
photoelectrochemistry
Online Access:https://doi.org/10.1002/celc.202400679
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https://doi.org/10.1002/celc.202400679

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