Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBT Device in Rail Transit
Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss. Compared with the traditional Si IGBT device, the performance of hybrid SiC IGBT is greatly improved, and compared with high...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2020-09-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2020.05.015 |
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| Summary: | Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss. Compared with the traditional Si IGBT device, the performance of hybrid SiC IGBT is greatly improved, and compared with high-voltage and high-power all SiC devices, hybrid SiC IGBT has greater advantages in cost and technology maturity. According to the characteristics of hybrid SiC IGBT devices, a converter module with low stray inductance in converter circuit was developed to meet the application requirements of hybrid SiC IGBT devices, and the influence of stray inductance of converter circuit on switching characteristics of hybrid SiC IGBT was studied. The experimental results showed that the stray inductance of converter module had a great influence on the amplitude and duration of switching on oscillation voltage of hybrid SiC IGBT, and the system loss could be reduced by about 25% by using hybrid SiC IGBT devices. |
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| ISSN: | 1000-128X |