Comparative Study on Application of Hybrid SiC IGBT Device and Si IGBT Device in Rail Transit

Hybrid SiC IGBT uses SiC Schottky diode to replace the anti-parallel diode in traditional IGBT devices, which can reduce the diode reverse recovery loss and IGBT turn-on loss. Compared with the traditional Si IGBT device, the performance of hybrid SiC IGBT is greatly improved, and compared with high...

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Bibliographic Details
Main Authors: Wei TIAN, Sunmeng XIE, Yanping CHEN, Rong ZHANG, Wu ZHU, Jie LIU, Yifan TAN
Format: Article
Language:zho
Published: Editorial Department of Electric Drive for Locomotives 2020-09-01
Series:机车电传动
Subjects:
Online Access:http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128x.2020.05.015
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