An InGaAsSb Based 640 × 512 Focal Plane Array With Low Surface Leakage Current for Extended Shortwave Detection

An InGaAsSb Based 640 × 512 Focal Plane Array With Low Surface Leakage Current for Extended Shortwave Detection

An extended-wavelength InGaAsSb focal plane array (FPA) with a 15 &#x03BC;m pixel pitch, 640 &#x00D7; 512 format, and a cutoff wavelength of 3.22 &#x03BC;m is demonstrated. Through the atomic layer deposition Al<sub>2</sub>O<sub>3</sub> passivation technology, the...

Full description

Saved in:
Bibliographic Details
Main Authors: Ruoyu Xie, Yifan Shan, Lingze Yao, Donghai Wu, Xiangbin Su, Hongyue Hao, Dongwei Jiang, Mengqi Yang, Ye Zhang, Hui Xie, Guowei Wang, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Photonics Journal
Subjects:
ESWIR
focal plane array
InGaAsSb
passivation
Online Access:https://ieeexplore.ieee.org/document/11072720/
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://ieeexplore.ieee.org/document/11072720/

Similar Items